G86N06K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max (Ta=25°C) :

88W Tc

Technology :

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs :

77 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250uA

Package / Case :

TO-252

Supplier Device Package :

TO-252 (DPAK)

Continuous Drain Current (Id) @ 25°C :

68A Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C ~ 175°C (TJ)

Mounting Type :

Surface Mount

FET Type :

N Channel

Power Dissipation (Max) :

88W

Input Capacitance (Ciss) (Max) @ Vds :

2860 pF @ 25 V

RoHS Status :

RoHS Compliant

Product Status :

Active

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Rds On (Max) @ Id, Vgs :

8.4mΩ @ 4A,10V

Series :

-

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

68A