G60N10T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3970 pF @ 50 V

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

146 nC @ 10 V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

25mOhm @ 20A, 10V

Drain to Source Voltage (Vdss) :

100 V

Vgs (Max) :

±20V

Series :

-

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Supplier Device Package :

TO-220

Package :

Tube

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Feature :

-

Package / Case :

TO-220-3

Power Dissipation (Max) :

160W (Tc)

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)