G48N03D3

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N Channel

Package / Case :

DFN3*3-8L

Vgs(th) (Max) @ Id :

2.4V @ 250uA

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Power Dissipation-Max (Ta=25°C) :

50W Tc

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Continuous Drain Current (Id) @ 25°C :

48A Tc

Series :

-

Current - Continuous Drain (Id) @ 25°C :

48A (Tc)

Rds On (Max) @ Id, Vgs :

4.5mΩ @ 20A,10V

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Vgs (Max) :

±20V

Product Status :

Active

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Input Capacitance (Ciss) (Max) @ Vds :

1784 pF @ 15 V

Supplier Device Package :

8-DFN (3.15x3.05)

Power Dissipation (Max) :

45W (Tc)