G3R350MT12D

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Mfr.Part #
G3R350MT12D
Manufacturer
GeneSiC Semiconductor
Package / Case
QFN
Datasheet
Download
Description
SIC MOSFET N-CH 11A TO247-3
Stock
47,959
In Stock :
47,959

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Manufacturer :
GeneSiC Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
Clock Oscillator
Channel Mode :
Enhancement
Rise Time :
5 ns
RoHS :
Details
Vgs (Max) :
±15V
Operating Supply Voltage (Min) :
2.97(V)
Number of Channels :
1 Channel
Transistor Type :
MOSFET
Programmable :
No
Operating Temperature :
-55°C ~ 175°C (TJ)
Power Dissipation (Max) :
74W (Tc)
Product Status :
Active
Supplier Device Package :
TO-247-3
Standard Frequency :
125
Series :
G3R
Base Product Number :
G3R350
Package :
Tube
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Technology :
SiC
Rds On (Max) @ Id, Vgs :
420mOhm @ 4A, 15V
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Continuous Drain Current Id :
11A
Package / Case :
QFN
Transistor Polarity :
N-Channel
FET Feature :
-
Mounting Type :
Through Hole
Frequency Stability :
±20(ppm)
Vgs(th) (Max) @ Id :
2.69V @ 2mA
Subcategory :
MOSFETs
Gate Charge (Qg) (Max) @ Vgs :
12 nC @ 15 V
Manufacturer :
GeneSiC Semiconductor
Product :
MOSFET
Drive Voltage (Max Rds On, Min Rds On) :
15V
Packaging :
Bulk
Mounting Style :
Through Hole
Operating Temp Range :
-40C to 85C
Operating Supply Voltage (Max) :
3.63(V)
Input Capacitance (Ciss) (Max) @ Vds :
334 pF @ 800 V
Drain to Source Voltage (Vdss) :
1200 V
Power Dissipation :
74W
Maximum Operating Temperature :
+ 175 C
Brand :
GeneSiC Semiconductor
Channel Type :
N Channel
Product Type :
MOSFET
Symmetry Max :
55(%)
Datasheets
G3R350MT12D
Introducing Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor G3R350MT12D from Chip IC,where excellence meets affordability. This product stands out with its Type:Clock Oscillator, Number of Channels:1 Channel, Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:QFN, Mounting Type:Through Hole, G3R350MT12D pinout, G3R350MT12D datasheet PDF, G3R350MT12D amp .Beyond Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor G3R350MT12D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

GeneSiC Semiconductor G3R350MT12D


SiC N-Channel Bulk 420mOhm @ 4A, 15V ±15V 334 pF @ 800 V 12 nC @ 15 V 1200 V QFN

G3R350MT12D Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 334 pF @ 800 V.Operating this transistor requires a 1200 V drain to source voltage (Vdss).

G3R350MT12D Features


a 1200 V drain to source voltage (Vdss)


G3R350MT12D Applications


There are a lot of GeneSiC Semiconductor
G3R350MT12D applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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