G35N02K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

40W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 4.5 V

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1380 pF @ 10 V

Mounting Type :

Surface Mount

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Series :

-

Supplier Device Package :

TO-252

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

13mOhm @ 20A, 4.5V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

20 V

Product Status :

Active

FET Feature :

-

Vgs (Max) :

±12V