G2K3N10H

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Power Dissipation (Max) :

2.4W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

100 V

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Vgs (Max) :

±20V

Supplier Device Package :

SOT-223

FET Type :

N-Channel

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Product Status :

Active

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

220mOhm @ 2A, 10V

Series :

-

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

434 pF @ 50 V

Package / Case :

TO-261-4, TO-261AA