G2312

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 4.5 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Package / Case :

TO-236-3, SC-59, SOT-23-3

Supplier Device Package :

SOT-23

Drain to Source Voltage (Vdss) :

20 V

Rds On (Max) @ Id, Vgs :

18mOhm @ 4.2A, 10V

Vgs (Max) :

±12V

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

780 pF @ 10 V

Series :

-

Power Dissipation (Max) :

1.25W

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

5A