G20N03D2

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Package / Case :

6-WDFN Exposed Pad

Supplier Device Package :

6-DFN (2x2)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Type :

N-Channel

Power Dissipation (Max) :

1.5W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Rds On (Max) @ Id, Vgs :

24mOhm @ 5A, 10V

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

873 pF @ 30 V

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Mounting Type :

Surface Mount

FET Feature :

-