G110N06T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

110A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

113 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Power Dissipation (Max) :

120W (Tc)

Supplier Device Package :

TO-220

FET Feature :

-

Package :

Tube

Product Status :

Active

Series :

-

Package / Case :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60 V

Rds On (Max) @ Id, Vgs :

6.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Through Hole

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5538 pF @ 25 V