G01N20LE

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

1.7A (Tc)

Supplier Device Package :

SOT-23-3

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 25 V

Power Dissipation (Max) :

1.5W (Tc)

Product Status :

Active

Series :

-

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

850mOhm @ 1.7A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Drain to Source Voltage (Vdss) :

200 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA