FZT953TA
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- Mfr.Part #
- FZT953TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Termination :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 125MHz
- Terminal Form :
- Gull wing
- Frequency - Transition :
- 120MHz
- Transistor Type :
- PNP
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Max Power Dissipation :
- 3W
- Lead Free :
- Lead Free
- hFE Min :
- 100
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Current Rating :
- -5A
- Max Collector Current :
- 5A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -100V
- Max Breakdown Voltage :
- 100V
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.7mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transition Frequency :
- 125MHz
- Height :
- 1.65mm
- Gain Bandwidth Product :
- 125MHz
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Weight :
- 7.994566mg
- Power Dissipation :
- 3W
- Transistor Application :
- SWITCHING
- Base Part Number :
- FZT953
- Collector Emitter Saturation Voltage :
- -420mV
- JESD-30 Code :
- R-PDSO-G4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 140V
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2006
- Datasheets
- FZT953TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT953TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -420mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT953TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz
FZT953TA Applications
There are a lot of Diodes Incorporated
FZT953TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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