FZT951TA
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- Mfr.Part #
- FZT951TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A SOT223-3
- Stock
- 327
- In Stock ：
- 327
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Termination :
- SMD/SMT
- Length :
- 6.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 120MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 5A
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Frequency :
- 120MHz
- Base Part Number :
- FZT951
- Power Dissipation :
- 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Number of Terminations :
- 4
- hFE Min :
- 100
- Current Rating :
- -5A
- Transistor Application :
- SWITCHING
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 3W
- Case Connection :
- COLLECTOR
- Height :
- 1.65mm
- Max Breakdown Voltage :
- 60V
- Weight :
- 7.994566mg
- JESD-30 Code :
- R-PDSO-G4
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 120MHz
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -60V
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 460mV
- Datasheets
- FZT951TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT951TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).120MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT951TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
FZT951TA Applications
There are a lot of Diodes Incorporated
FZT951TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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