FZT653TA
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- Mfr.Part #
- FZT653TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A SOT223-3
- Stock
- 6,865
- In Stock ：
- 6,865
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage :
- 100V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 230mV
- Height :
- 1.65mm
- Continuous Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 2W
- Base Part Number :
- FZT653
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Width :
- 3.7mm
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 175MHz
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Mount :
- Surface Mount
- Current Rating :
- 2A
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Pbfree Code :
- No
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 175MHz
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Published :
- 2013
- Voltage - Rated DC :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 100V
- Frequency :
- 175MHz
- Datasheets
- FZT653TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT653TA Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 230mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 175MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
FZT653TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
FZT653TA Applications
There are a lot of Diodes Incorporated
FZT653TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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