FZT649
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- Mfr.Part #
- FZT649
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT223-4
- Stock
- 67,207
- In Stock ：
- 67,207
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Weight :
- 188mg
- Terminal Form :
- Gull wing
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Base Part Number :
- FZT649
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Width :
- 3.7mm
- Polarity/Channel Type :
- NPN
- Published :
- 2017
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Frequency :
- 150MHz
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Mounting Type :
- Surface Mount
- Height :
- 1.7mm
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 35V
- Current Rating :
- 3A
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 25V
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 600mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Pins :
- 4
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Voltage - Rated DC :
- 25V
- Length :
- 6.7mm
- Datasheets
- FZT649
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT649 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 3A volts is possible.
FZT649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FZT649 Applications
There are a lot of ON Semiconductor
FZT649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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