FZ2400R12HE4B9HOSA2

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Mfr.Part #
FZ2400R12HE4B9HOSA2
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 1200V 3560A
Stock
9
In Stock :
9

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Lead Free :
Lead Free
Input Capacitance (Cies) @ Vce :
150nF @ 25V
Published :
2002
Operating Temperature :
-40°C~150°C
Turn Off Time-Nom (toff) :
1320 ns
Polarity/Channel Type :
N-Channel
Current - Collector (Ic) (Max) :
3560A
ECCN Code :
EAR99
IGBT Type :
Trench Field Stop
Input :
Standard
Case Connection :
Isolated
Transistor Application :
POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) :
1200V
Factory Lead Time :
50 Weeks
Terminal Position :
UPPER
Number of Elements :
3
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
UNSPECIFIED
JESD-30 Code :
R-PUFM-X9
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
5mA
Configuration :
Single Switch
Power - Max :
13500W
Turn On Time :
880 ns
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 2400A
Surface Mount :
No
NTC Thermistor :
No
Mounting Type :
Chassis Mount
Package / Case :
Module
Halogen Free :
Not Halogen Free
Number of Terminations :
9
Additional Feature :
UL APPROVED
Introducing Transistors - IGBTs - Modules Infineon Technologies FZ2400R12HE4B9HOSA2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C, Mounting Type:Chassis Mount, Package / Case:Module, Number of Terminations:9, FZ2400R12HE4B9HOSA2 pinout, FZ2400R12HE4B9HOSA2 datasheet PDF, FZ2400R12HE4B9HOSA2 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FZ2400R12HE4B9HOSA2 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FZ2400R12HE4B9HOSA2


FZ2400R12HE4B9HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FZ2400R12HE4B9HOSA2 Description


The FZ2400R12HE4B9HOSA2 is an IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.



FZ2400R12HE4B9HOSA2 Features


  • Electrical Features

  • Extended operating temperature Tvjop

  • Low switching losses

  • Mechanical Features

  • IHM B housing

  • High power density

  • Package with CTI>400



FZ2400R12HE4B9HOSA2 Applications


  • High power converters

  • Motor drives

  • As a switch

  • Switch electrical power


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