FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transition Frequency :
- 75MHz
- Number of Terminations :
- 3
- Weight :
- 30mg
- Radiation Hardening :
- No
- Current Rating :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 75MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 350mV
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 60V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Width :
- 1.4mm
- Max Power Dissipation :
- 500mW
- Published :
- 2008
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Frequency :
- 75MHz
- Length :
- 2.92mm
- Polarity/Channel Type :
- NPN
- Height :
- 940μm
- Factory Lead Time :
- 2 Weeks
- Base Part Number :
- FSB560
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 100
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Datasheets
- FSB560
FSB560 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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