FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 350mV
- hFE Min :
- 100
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 75MHz
- Max Collector Current :
- 2A
- Published :
- 2008
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Length :
- 2.92mm
- Base Part Number :
- FSB560
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 75MHz
- Transition Frequency :
- 75MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 940μm
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 2A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- Weight :
- 30mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Datasheets
- FSB560
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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