FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 350mV
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Power Dissipation :
- 500mW
- Current Rating :
- 2A
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 75MHz
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- FSB560
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 75MHz
- Height :
- 940μm
- Max Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 80V
- Length :
- 2.92mm
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 75MHz
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Max Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 30mg
- Datasheets
- FSB560
FSB560 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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