FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 2.92mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- Frequency :
- 75MHz
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Current Rating :
- 2A
- Max Breakdown Voltage :
- 60V
- Power Dissipation :
- 500mW
- Voltage - Rated DC :
- 60V
- Base Part Number :
- FSB560
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 940μm
- Collector Emitter Saturation Voltage :
- 350mV
- ECCN Code :
- EAR99
- Transition Frequency :
- 75MHz
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 75MHz
- Weight :
- 30mg
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- Max Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Datasheets
- FSB560
FSB560 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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