FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.4mm
- Collector Emitter Saturation Voltage :
- 350mV
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Current Rating :
- 2A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 2.92mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Frequency :
- 75MHz
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Height :
- 940μm
- Transition Frequency :
- 75MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2008
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 75MHz
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Base Part Number :
- FSB560
- Terminal Position :
- Dual
- Datasheets
- FSB560
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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