FS225R12KE4BOSA1
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- Mfr.Part #
- FS225R12KE4BOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 320A 1100W
- Stock
- 71
- In Stock ：
- 71
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Configuration :
- Full Bridge
- Mounting Type :
- Chassis Mount
- Turn Off Time-Nom (toff) :
- 600 ns
- Terminal Position :
- UPPER
- Input Capacitance (Cies) @ Vce :
- 13nF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Current - Collector Cutoff (Max) :
- 3mA
- Number of Elements :
- 6
- Terminal Form :
- UNSPECIFIED
- Current - Collector (Ic) (Max) :
- 320A
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 225A
- NTC Thermistor :
- yes
- Power - Max :
- 1100W
- Series :
- EconoPACK™+
- Input :
- Standard
- Turn On Time :
- 220 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- Module
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -40°C~150°C
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 29
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- IGBT Type :
- Trench Field Stop
- Case Connection :
- Isolated
- JESD-30 Code :
- R-XUFM-X29
- Pin Count :
- 29
- Datasheets
- FS225R12KE4BOSA1
FS225R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS225R12KE4BOSA1 Description
FS225R12KE4BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?+B series modules with trench/fieldstopIGBT4 and optimized emitter-controlled high-efficiency diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS225R12KE4BOSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High-efficiency diode
FS225R12KE4BOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
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