FQU9N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.7A, 10V

Drain to Source Breakdown Voltage :

250V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

29.6A

Fall Time (Typ) :

45 ns

Voltage - Rated DC :

250V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Mount :

Through Hole

Power Dissipation :

2.5W

Rise Time :

105ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta 55W Tc

FET Type :

N-Channel

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±30V

Series :

QFET®

JESD-609 Code :

e3

Weight :

343.08mg

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drain-source On Resistance-Max :

0.42Ohm

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

7.4A

Number of Pins :

3

Number of Terminations :

3

Radiation Hardening :

No

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

Number of Elements :

1

Published :

2013

Continuous Drain Current (ID) :

7.4A

Turn On Delay Time :

13 ns

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA