FQU7N20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Number of Terminations :

3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Drain-source On Resistance-Max :

0.69Ohm

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200V

Packaging :

Tube

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.65A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

21A

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

5.3A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

JESD-609 Code :

e3

FET Type :

N-Channel

Mounting Type :

Through Hole

Power Dissipation-Max :

2.5W Ta 45W Tc

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

73 mJ