FQU6N25TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

DS Breakdown Voltage-Min :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.2A, 10V

Pulsed Drain Current-Max (IDM) :

17.6A

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

1Ohm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Surface Mount :

No

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

75 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

250V

Power Dissipation-Max :

2.5W Ta 45W Tc

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

4.4A

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE