FQT7N10LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Position :

Dual

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Resistance :

350mOhm

Threshold Voltage :

2V

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Current Rating :

1.7A

Power Dissipation :

2W

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Continuous Drain Current (ID) :

1.7A

Length :

6.5mm

Contact Plating :

Tin

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

50 ns

Avalanche Energy Rating (Eas) :

50 mJ

Operating Temperature :

-55°C~150°C TJ

Weight :

188mg

Height :

1.8mm

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

ECCN Code :

EAR99

Rise Time :

100ns

Published :

2017

Power Dissipation-Max :

2W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Voltage - Rated DC :

100V

Width :

3.56mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Turn On Delay Time :

9 ns

Element Configuration :

Single

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

6.8A

JESD-609 Code :

e3

Number of Terminations :

4

Number of Channels :

1

Turn-Off Delay Time :

17 ns