FQT3P20TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Terminal Position :

Dual

Turn On Delay Time :

8.5 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Rise Time :

35ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-261-4, TO-261AA

Series :

QFET®

Turn-Off Delay Time :

12 ns

Length :

6.5mm

Continuous Drain Current (ID) :

670mA

Terminal Finish :

Tin (Sn)

FET Type :

P-Channel

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

200V

Weight :

188mg

Current Rating :

-670mA

Mount :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Tc

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Height :

1.6mm

Lead Free :

Lead Free

Published :

2001

Width :

3.56mm

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.67A

Pulsed Drain Current-Max (IDM) :

2.7A

Resistance :

2.7Ohm

Terminal Form :

Gull wing

Voltage - Rated DC :

-200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

670mA Tc

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 335mA, 10V

Vgs (Max) :

±30V

JESD-30 Code :

R-PDSO-G4

Drain to Source Breakdown Voltage :

-200V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount