FQP6N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

63W Tc

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Package / Case :

TO-220-3

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Position :

Single

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.75A, 10V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Drain-source On Resistance-Max :

1Ohm

Number of Terminations :

3

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

250V

Number of Elements :

1

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Pin Count :

3

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Series :

QFET®

Avalanche Energy Rating (Eas) :

75 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

22A

Drain to Source Voltage (Vdss) :

250V