FQP17P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

79W

Mount :

Through Hole

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Radiation Hardening :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.5A, 10V

Package / Case :

TO-220-3

Packaging :

Tube

Power Dissipation-Max :

79W Tc

Voltage - Rated DC :

-60V

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-60V

Drain to Source Voltage (Vdss) :

60V

Fall Time (Typ) :

60 ns

Dual Supply Voltage :

-60V

Height :

9.4mm

Length :

10.1mm

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-17A

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

-4 V

Turn On Delay Time :

13 ns

Element Configuration :

Single

Mounting Type :

Through Hole

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Series :

QFET®

Width :

4.7mm

Contact Plating :

Tin

Turn-Off Delay Time :

22 ns

Number of Elements :

1

Rise Time :

100ns

Gate to Source Voltage (Vgs) :

25V

Current Rating :

-17A

Threshold Voltage :

-4V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

68A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

1999

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Resistance :

120mOhm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3