FQP16N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain Current-Max (Abs) (ID) :

16.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Pulsed Drain Current-Max (IDM) :

65.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.16Ohm

Power Dissipation-Max :

108W Tc

Series :

QFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Pin Count :

3

Package / Case :

TO-220-3

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

150V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Vgs (Max) :

±25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

Current - Continuous Drain (Id) @ 25°C :

16.4A Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

160m Ω @ 8.2A, 10V

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING