FQP13N10L
- Mfr.Part #
- FQP13N10L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12.8A TO220-3
- Stock
- 24,667
- In Stock :
- 24,667
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Additional Feature :
- FAST SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 12.8A
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 6.4A, 10V
- Height :
- 9.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.1mm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Continuous Drain Current (ID) :
- 12.8A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Published :
- 2013
- Threshold Voltage :
- 2V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- 100V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 95 mJ
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 72 ns
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Rise Time :
- 220ns
- JEDEC-95 Code :
- TO-220AB
- Turn On Delay Time :
- 7.5 ns
- Power Dissipation-Max :
- 65W Tc
- Transistor Application :
- SWITCHING
- Width :
- 4.7mm
- Factory Lead Time :
- 4 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Tc
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Resistance :
- 180mOhm
- Packaging :
- Tube
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 22 ns
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 65W
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Datasheets
- FQP13N10L

N-Channel Tube 180m Ω @ 6.4A, 10V ±20V 520pF @ 25V 12nC @ 5V TO-220-3
FQP13N10L Description
FQP13N10L is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, DC motor control, audio amplifier, and variable switching power applications.
FQP13N10L Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220 package
FQP13N10L Applications
-
Switched-mode power supplies
-
Motor control
-
Audio amplifier
-
High-efficiency switching power applications
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