FQN1N50CTA

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Weight :

240mg

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

380mA Tc

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Rise Time :

10ns

Width :

4.19mm

Vgs (Max) :

±30V

Turn-Off Delay Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Length :

5.2mm

Series :

QFET®

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

10 ns

Factory Lead Time :

6 Weeks

Terminal Position :

BOTTOM

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Feedback Cap-Max (Crss) :

40 pF

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Resistance :

6Ohm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Box (TB)

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

380mA

JESD-609 Code :

e3

Height :

5.33mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Power Dissipation :

890mW

Pbfree Code :

yes

Power Dissipation-Max :

890mW Ta 2.08W Tc

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V