FQI8N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pulsed Drain Current-Max (IDM) :

30A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs (Max) :

±30V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

81 ns

Published :

2013

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

8A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

230 mJ

Weight :

2.084g

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

64.5 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

7.5A

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

FET Type :

N-Channel

Power Dissipation-Max :

3.13W Ta 147W Tc

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Power Dissipation :

3.13W

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Rise Time :

60.5ns

Turn On Delay Time :

16.5 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

600V