FQI3N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Pbfree Code :

yes

Power Dissipation-Max :

3.13W Ta 45W Tc

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

2.8A

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

250V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Number of Elements :

1

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

250V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

Surface Mount :

No

Terminal Finish :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Pulsed Drain Current-Max (IDM) :

11.2A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.4A, 10V

Avalanche Energy Rating (Eas) :

40 mJ

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)