FQB7N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Rds On (Max) @ Id, Vgs :

350m Ω @ 3.65A, 10V

Mounting Type :

Surface Mount

Terminal Position :

Single

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 40W Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Pulsed Drain Current-Max (IDM) :

29.2A

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Number of Elements :

1

Pbfree Code :

yes

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.35Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

7.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

50 mJ

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

JESD-609 Code :

e3

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant