FQB2P40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

400V

Pulsed Drain Current-Max (IDM) :

8A

Avalanche Energy Rating (Eas) :

120 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 1A, 10V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Number of Terminations :

2

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.13W Ta 63W Tc

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

400V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED