FQB1P50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

30 ns

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 750mA, 10V

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2017

Vgs (Max) :

±30V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Number of Terminations :

2

Voltage - Rated DC :

-500V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Factory Lead Time :

4 Weeks

Power Dissipation :

3.13W

Length :

9.65mm

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Width :

10.67mm

Pbfree Code :

yes

Power Dissipation-Max :

3.13W Ta 63W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Current Rating :

-1.5A

Weight :

1.31247g

FET Type :

P-Channel

Continuous Drain Current (ID) :

1.5A

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Qualification Status :

Not Qualified

Turn-Off Delay Time :

27 ns

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

6A

Height :

4.83mm

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Terminal Finish :

Tin (Sn)

Rise Time :

25ns

ECCN Code :

EAR99

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

9 ns

Number of Elements :

1