FQB15P12TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

1157 mJ

Drain Current-Max (Abs) (ID) :

15A

Rds On (Max) @ Id, Vgs :

200m Ω @ 7.5A, 10V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

120V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.1pF @ 25V

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.75W Ta 100W Tc

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Pbfree Code :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.2Ohm

Pulsed Drain Current-Max (IDM) :

60A

DS Breakdown Voltage-Min :

120V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL