FQA85N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-3P

Turn-Off Delay Time :

175 ns

Input Capacitance (Ciss) (Max) @ Vds :

4120pF @ 25V

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

214W Tc

Element Configuration :

Single

Vgs (Max) :

±25V

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Fall Time (Typ) :

170 ns

Power Dissipation :

214W

Min Operating Temperature :

-55°C

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

25V

Drain to Source Resistance :

10MOhm

Lead Free :

Lead Free

Rise Time :

230ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

10mOhm @ 50A, 10V

Mounting Type :

Through Hole

Mount :

Through Hole

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2001

REACH SVHC :

No SVHC

Current Rating :

100A

Series :

QFET®

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Input Capacitance :

4.12nF

Number of Elements :

1

Dual Supply Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

4V

Rds On Max :

10 MΩ

Voltage - Rated DC :

60V