FQA65N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

65A

Pulsed Drain Current-Max (IDM) :

260A

Width :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Power Dissipation :

310W

Published :

2001

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Turn On Delay Time :

120 ns

Factory Lead Time :

4 Weeks

Rise Time :

640ns

Mount :

Through Hole

Number of Terminations :

3

Height :

18.9mm

Radiation Hardening :

No

Package / Case :

TO-3P-3, SC-65-3

Series :

QFET®

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Weight :

6.401g

JESD-609 Code :

e3

Turn-Off Delay Time :

340 ns

Transistor Application :

SWITCHING

Packaging :

Tube

Voltage - Rated DC :

200V

Number of Elements :

1

Length :

15.8mm

Fall Time (Typ) :

275 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Number of Pins :

3

Pbfree Code :

yes

Power Dissipation-Max :

310W Tc

Current Rating :

65A

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

5V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V