FPF2C8P2NL07A
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- Mfr.Part #
- FPF2C8P2NL07A
- Manufacturer
- onsemi
- Package / Case
- F2 Module
- Datasheet
- Download
- Description
- IGBT MODULE 650V 30A 135W F2
- Stock
- 16,559
- In Stock ：
- 16,559
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Modules
- Pbfree Code :
- yes
- Input :
- Standard
- Max Collector Current :
- 30A
- Collector Emitter Breakdown Voltage :
- 650V
- Current - Collector Cutoff (Max) :
- 250μA
- IGBT Type :
- Field Stop
- Configuration :
- Three Phase
- Weight :
- 45g
- Isolation Voltage :
- 2.5kV
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- yes
- Package / Case :
- F2 Module
- Max Power Dissipation :
- 135W
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -40°C~150°C TJ
- Published :
- 2014
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 135W
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- HTS Code :
- 8542.39.00.01
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FPF2C8P2NL07A
FPF2C8P2NL07A datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at
FPF2C8P2NL07A Description
FPF2C8P2NL07A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FPF2C8P2NL07A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FPF2C8P2NL07A Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FPF2C8P2NL07A Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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