FP50R06W2E3B11BOMA1
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- Mfr.Part #
- FP50R06W2E3B11BOMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 600V 65A 175W
- Stock
- 833
- In Stock ：
- 833
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Mounting Type :
- Chassis Mount
- Current - Collector Cutoff (Max) :
- 1mA
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Number of Terminations :
- 23
- Configuration :
- Three Phase Inverter
- Terminal Position :
- UPPER
- RoHS Status :
- RoHS Compliant
- Turn Off Time-Nom (toff) :
- 355 ns
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Cies) @ Vce :
- 3.1nF @ 25V
- Halogen Free :
- Not Halogen Free
- Max Collector Current :
- 65A
- Package / Case :
- Module
- Current - Collector (Ic) (Max) :
- 65A
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 16 Weeks
- Input :
- Standard
- Number of Elements :
- 7
- Power - Max :
- 175W
- Collector Emitter Voltage (VCEO) :
- 600V
- Published :
- 2002
- Number of Pins :
- 23
- Terminal Form :
- UNSPECIFIED
- Mount :
- Screw
- NTC Thermistor :
- yes
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 50A
- Operating Temperature :
- -40°C~150°C
- Transistor Application :
- POWER CONTROL
- IGBT Type :
- Trench Field Stop
- Case Connection :
- Isolated
- Turn On Time :
- 45 ns
- Datasheets
- FP50R06W2E3B11BOMA1
FP50R06W2E3B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FP50R06W2E3B11BOMA1 Description
FP50R06W2E3B11BOMA1 is a 600v EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode. The FP50R06W2E3B11BOMA1 can be applied in Automotive, Infotainment & cluster, Industrial, Appliances, Personal electronics, and Gaming due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FP50R06W2E3B11BOMA1 is in the tray package with 175W Power dissipation.
FP50R06W2E3B11BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 600v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 65A
Repetitive peak collector current Tp = 1 ms: 100A
Total power dissipation Tc = 25°C: 175W
Gate-emitter peak voltage: ±20V
FP50R06W2E3B11BOMA1 Applications
Automotive
Infotainment & cluster
Industrial
Appliances
Personal electronics
Gaming
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