FP35R12W2T4PBPSA1
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- Mfr.Part #
- FP35R12W2T4PBPSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 70A 20MW
- Stock
- 18
- In Stock ：
- 18
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Current - Collector Cutoff (Max) :
- 1mA
- Case Connection :
- Isolated
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Package / Case :
- Module
- Surface Mount :
- No
- Power - Max :
- 20mW
- Published :
- 2002
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 7
- Input Capacitance (Cies) @ Vce :
- 2nF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~150°C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- EasyPIM™ 2B
- Current - Collector (Ic) (Max) :
- 70A
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Three Phase Inverter
- Input :
- Three Phase Bridge Rectifier
- Turn On Time :
- 43 ns
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 16 Weeks
- IGBT Type :
- Trench Field Stop
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- yes
- Terminal Position :
- UPPER
- Turn Off Time-Nom (toff) :
- 510 ns
- JESD-30 Code :
- R-XUFM-X23
- Number of Terminations :
- 23
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 35A
- Datasheets
- FP35R12W2T4PBPSA1
FP35R12W2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FP35R12W2T4PBPSA1 Description
FP35R12W2T4PBPSA1 is a single IGBT with a breakdown voltage of 1200V from Infineon Technologies. FP35R12W2T4PBPSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 70A. The FP35R12W2T4PBPSA1 has 3 pins and it is available in Module packaging way. FP35R12W2T4PBPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP35R12W2T4PBPSA1 Features
-
Voltage - Collector Emitter Breakdown (Max): 1200V
-
Input: Three Phase Bridge Rectifier
-
Transistor Application: POWER CONTROL
-
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
-
Current - Collector (Ic) (Max): 70A
FP35R12W2T4PBPSA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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