FJV42MTF
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- Mfr.Part #
- FJV42MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT23-3
- Stock
- 110,765
- In Stock ：
- 110,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Published :
- 2013
- Terminal Form :
- Gull wing
- Min Operating Temperature :
- -55°C
- Max Power Dissipation :
- 350mW
- Factory Lead Time :
- 13 Weeks
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 3
- Weight :
- 30mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Base Voltage (VCBO) :
- 350V
- hFE Min :
- 25
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 350V
- Max Collector Current :
- 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Base Part Number :
- FJV42
- Frequency :
- 50MHz
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 350V
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FJV42MTF
NPN 100nA ICBO 1 Elements 3 Terminations NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV42MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FJV42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
FJV42MTF Applications
There are a lot of ON Semiconductor
FJV42MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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