FJP5555TU
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- Mfr.Part #
- FJP5555TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220-3
- Stock
- 14,358
- In Stock ：
- 14,358
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Width :
- 4.83mm
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 800mA 3V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Packaging :
- Tube
- Transistor Type :
- NPN
- Length :
- 10.67mm
- Collector Base Voltage (VCBO) :
- 1.05kV
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 400V
- Package / Case :
- TO-220-3
- Power Dissipation :
- 75W
- Mounting Type :
- Through Hole
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Emitter Base Voltage (VEBO) :
- 14V
- Max Power Dissipation :
- 75W
- Current Rating :
- 5A
- hFE Min :
- 20
- Pbfree Code :
- yes
- Height :
- 16.51mm
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FJP5555TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5555TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 800mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.The emitter base voltage can be kept at 14V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJP5555TU Features
the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A
FJP5555TU Applications
There are a lot of ON Semiconductor
FJP5555TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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