FJP5554TU

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Mfr.Part #
FJP5554TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Current Rating :
4A
Voltage - Rated DC :
400V
Radiation Hardening :
No
Mount :
Through Hole
Max Collector Current :
4A
Pbfree Code :
yes
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Power Dissipation :
70W
Terminal Finish :
Tin (Sn)
Weight :
1.8g
Packaging :
Tube
Current - Collector Cutoff (Max) :
250μA
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
15V
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
400V
Max Power Dissipation :
70W
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
1.05kV
Transistor Element Material :
SILICON
Number of Elements :
1
Published :
2013
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Number of Pins :
3
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
400V
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
1.5V
Number of Terminations :
3
hFE Min :
20
Factory Lead Time :
15 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Element Configuration :
Single
Datasheets
FJP5554TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP5554TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, FJP5554TU pinout, FJP5554TU datasheet PDF, FJP5554TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP5554TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP5554TU


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP5554TU Overview


This device has a DC current gain of 20 @ 800mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 15V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.The maximum collector current is 4A volts.

FJP5554TU Features


the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A


FJP5554TU Applications


There are a lot of ON Semiconductor
FJP5554TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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