FJN3303FTA
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- Mfr.Part #
- FJN3303FTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1.5A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 9V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 700V
- Frequency :
- 4MHz
- Power Dissipation :
- 650mW
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- FJN3303
- Transition Frequency :
- 4MHz
- Transistor Type :
- NPN
- Number of Pins :
- 3
- hFE Min :
- 14
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 650mW
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 400V
- Turn Off Time-Max (toff) :
- 4700ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Weight :
- 240mg
- Datasheets
- FJN3303FTA
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3303FTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
FJN3303FTA Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FTA Applications
There are a lot of ON Semiconductor
FJN3303FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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