FJN3301RTA
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- Mfr.Part #
- FJN3301RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 14,887
- In Stock ：
- 14,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Current Rating :
- 100mA
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 50V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 250MHz
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 5V
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Box (TB)
- Continuous Collector Current :
- 100mA
- Frequency - Transition :
- 250MHz
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Power Dissipation :
- 300mW
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- HTS Code :
- 8541.21.00.95
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 20
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 10V
- Datasheets
- FJN3301RTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor
FJN3301RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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