FJD5555TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Power Dissipation :

1.34W

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 800mA 3V

Published :

2014

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1A, 3.5A

Collector Base Voltage (VCBO) :

1.05kV

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

14V

Max Collector Current :

5A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

JESD-609 Code :

e3

Base Part Number :

FJD5555

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

2

Factory Lead Time :

17 Weeks

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Max Breakdown Voltage :

400V

Collector Emitter Breakdown Voltage :

400V

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

400V

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Max Power Dissipation :

1.34W

hFE Min :

20

Transistor Element Material :

SILICON