FJD5553TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

FJD5553

Max Collector Current :

3A

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.39mm

Number of Elements :

1

Mount :

Surface Mount

Max Power Dissipation :

1.25W

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

1.05kV

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA 3V

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

3

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Published :

2013

Max Breakdown Voltage :

400V

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

400V

Factory Lead Time :

4 Weeks

Power Dissipation :

1.25W

Collector Emitter Voltage (VCEO) :

400V

ECCN Code :

EAR99

Width :

6.22mm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Length :

6.73mm

Weight :

260.37mg

Emitter Base Voltage (VEBO) :

14V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 1A

hFE Min :

30

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)