FJD3305H1TM
- Mfr.Part #
- FJD3305H1TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO252AA
- Stock
- 1,245
- In Stock :
- 1,245
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Transition Frequency :
- 4MHz
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 4MHz
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 700V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Published :
- 2016
- Max Breakdown Voltage :
- 400V
- hFE Min :
- 19
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency :
- 4MHz
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Power Dissipation :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 4A
- Collector Emitter Breakdown Voltage :
- 400V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.1W
- Max Collector Current :
- 4A
- Base Part Number :
- FJD3305
- Weight :
- 260.37mg
- Terminal Form :
- Gull wing
- Datasheets
- FJD3305H1TM

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3305H1TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 400V volts.When collector current reaches its maximum, it can reach 4A volts.
FJD3305H1TM Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJD3305H1TM Applications
There are a lot of ON Semiconductor
FJD3305H1TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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