FJD3076TM
- Mfr.Part #
- FJD3076TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A DPAK
- Stock
- 43,758
- In Stock :
- 43,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 800mV
- Terminal Form :
- Gull wing
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Max Power Dissipation :
- 1W
- hFE Min :
- 130
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 500mA 3V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Width :
- 6.1mm
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.3mm
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1W
- Weight :
- 260.37mg
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- Length :
- 6.6mm
- ECCN Code :
- EAR99
- Base Part Number :
- FJD3076
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 32V
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2001
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 32V
- Element Configuration :
- Single
- Datasheets
- FJD3076TM
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NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3076TM Overview
In this device, the DC current gain is 130 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
FJD3076TM Features
the DC current gain for this device is 130 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FJD3076TM Applications
There are a lot of ON Semiconductor
FJD3076TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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