FF400R33KF2CB3NOSA1
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- Mfr.Part #
- FF400R33KF2CB3NOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 3300V 660A AIHV130-3
- Stock
- 13,355
- In Stock ：
- 13,355
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Input Capacitance (Cies) @ Vce :
- 50nF @ 25V
- Input :
- Standard
- Power - Max :
- 4800W
- Current - Collector (Ic) (Max) :
- 660A
- Package / Case :
- Module
- Voltage - Collector Emitter Breakdown (Max) :
- 3300V
- Current - Collector Cutoff (Max) :
- 5mA
- Operating Temperature :
- -40°C~125°C
- Mounting Type :
- Chassis Mount
- Vce(on) (Max) @ Vge, Ic :
- 4.25V @ 15V, 400A
- Configuration :
- 2 Independent
- NTC Thermistor :
- No
- Datasheets
- FF400R33KF2CB3NOSA1
FF400R33KF2CB3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FF400R33KF2CB3NOSA1 Description
FF400R33KF2CB3NOSA1 is a 3300v IGBT. The transistor FF400R33KF2CB3NOSA1 can be applied in Automotive, Infotainment & cluster, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF400R33KF2CB3NOSA1 is with 4kW power dissipation.
FF400R33KF2CB3NOSA1 Features
Continuous DC collector current:660A
Total power dissipation: TC=25℃: 4kW
Gate-emitter peak voltage: ±20V
Turn-off energy loss per pulse: 470mJ
Continuous DC forward current: 400A
FF400R33KF2CB3NOSA1 Applications
Automotive
Infotainment & cluster
Communications equipment
Datacom module
Personal electronics
Connected peripherals & printers
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