FDZ663P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Transistor Element Material :

SILICON

Weight :

67mg

Mounting Type :

Surface Mount

Turn-Off Delay Time :

67 ns

Continuous Drain Current (ID) :

2.7A

Terminal Position :

BOTTOM

Vgs (Max) :

±8V

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Lead Free

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Height :

150μm

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

32 ns

Power Dissipation :

1.3W

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Number of Pins :

4

JESD-609 Code :

e1

Turn On Delay Time :

4.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Package / Case :

4-XFBGA, WLCSP

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Length :

800μm

Series :

PowerTrench®

FET Type :

P-Channel

Rise Time :

6.2ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Feedback Cap-Max (Crss) :

80 pF

Pbfree Code :

yes

Width :

800μm

Number of Terminations :

4

Terminal Form :

Ball

Input Capacitance (Ciss) (Max) @ Vds :

525pF @ 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Rds On (Max) @ Id, Vgs :

134m Ω @ 2A, 4.5V

Power Dissipation-Max :

1.3W Ta

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)